• One-stop ElectronicL Components Service Platform
  • 中文介绍
  • Contact Us  ▼
  • Brand Category

  • HOME > Products > Discrete Semiconductors > Transistors
    • NVH4L070N120M3S

      Manufacturer No:NVH4L070N120M3S

      Manufacturer:onsemi

      Type:MOSFET

      Description:MOSFET SIC MOS TO247-4L 70MOHM 1200V M3

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: onsemi
    Product Category: MOSFET
    RoHS:  Details
    Technology: SiC
    Mounting Style: Through Hole
    Package / Case: TO-247-4L
    Transistor Polarity: N-Channel
    Number of Channels: 1 Channel
    Vds - Drain-Source Breakdown Voltage: 1.2 kV
    Id - Continuous Drain Current: 29 A
    Rds On - Drain-Source Resistance: 64.8 mOhms
    Vgs - Gate-Source Voltage: - 8 V + 22 V
    Vgs th - Gate-Source Threshold Voltage: 3.37 V
    Qg - Gate Charge: 47.9 nC
    Minimum Operating Temperature: - 55 C
    Maximum Operating Temperature: + 175 C
    Pd - Power Dissipation: 163 W
    Channel Mode: Enhancement
    Packaging: Tube
    Brand: onsemi
    Configuration: Single
    Fall Time: 6.2 ns
    Forward Transconductance - Min: 11 S
    Product Type: MOSFET
    Rise Time: 3.6 ns
    other: 30
    Subcategory: MOSFETs
    Typical Turn-Off Delay Time: 21.9 ns
    Typical Turn-On Delay Time: 12.1 ns

    HOT

  • PSMN028-100HSX
    Brand:Nexperia

  • PSMN012-60HLX
    Brand:Nexperia

  • IQDH88N06LM5CGATMA1
    Brand:Infineon Technologies

  • PSMN029-100HLX
    Brand:Nexperia

  • IPTC063N15NM5ATMA1
    Brand:Infineon Technologies

  • GAN3R2-100CBEAZ
    Brand:Nexperia

  • IKY120N65EH7XKSA1
    Brand:Infineon Technologies

  • GAN080-650EBEZ
    Brand:Nexperia

  • BC53PAS-QX
    Brand:Nexperia

  • PSMN1R8-80SSFJ
    Brand:Nexperia