Manufacturer No:IPDQ60R020CFD7XTMA1
Manufacturer:Infineon
Type:MOSFET
Description:MOSFET
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Product Attribute | Attribute Value |
---|---|
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | HDSOP-22 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Id - Continuous Drain Current: | 112 A |
Rds On - Drain-Source Resistance: | 20 mOhms |
Vgs - Gate-Source Voltage: | - 20 V + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Qg - Gate Charge: | 186 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 543 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Infineon Technologies |
Configuration: | Single |
Fall Time: | 5 ns |
Product Type: | MOSFET |
Rise Time: | 10 ns |
other: | 750 |
Subcategory: | MOSFETs |
Typical Turn-Off Delay Time: | 155 ns |
Typical Turn-On Delay Time: | 53 ns |
Part # Aliases: | IPDQ60R020CFD7 SP005419685 |
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