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    • SQSA82CENW-T1_GE3

      Manufacturer No:SQSA82CENW-T1_GE3

      Manufacturer:Vishay

      Type:MOSFET

      Description:MOSFET Automotive N-Channel 80V (D-S) 175C MOSFET W 90M SG

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Vishay
    Product Category: MOSFET
    RoHS:  Details
    Technology: Si
    Mounting Style: SMD/SMT
    Package / Case: PowerPAK1212-8W
    Transistor Polarity: N-Channel
    Number of Channels: 1 Channel
    Vds - Drain-Source Breakdown Voltage: 80 V
    Id - Continuous Drain Current: 12 A
    Rds On - Drain-Source Resistance: 90 MOhms
    Vgs - Gate-Source Voltage: - 20 V + 20 V
    Vgs th - Gate-Source Threshold Voltage: 2 V
    Qg - Gate Charge: 6.4 nC
    Minimum Operating Temperature: - 55 C
    Maximum Operating Temperature: + 175 C
    Pd - Power Dissipation: 27 W
    Series: SQSA82CENW
    Packaging: Reel
    Packaging: Cut Tape
    Packaging: Reel
    Brand: Vishay Semiconductors
    Fall Time: 3 ns
    Forward Transconductance - Min: 14 S
    Product Type: MOSFET
    Rise Time: 3ns
    other: 3000
    Subcategory: MOSFETs
    Typical Turn-Off Delay Time: 14 ns
    Typical Turn-On Delay Time: 7 ns

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