Manufacturer No:IQE030N06NM5SCATMA1
Manufacturer:Infineon
Type:MOSFET
Description:MOSFET
RFQ
CLOSE
Product Attribute | Attribute Value |
---|---|
Manufacturer: | Infineon |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | WHSON-8 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Id - Continuous Drain Current: | 21 A |
Rds On - Drain-Source Resistance: | 3 mOhms |
Vgs - Gate-Source Voltage: | - 20 V + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3.3 V |
Qg - Gate Charge: | 49 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 2.5 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Infineon Technologies |
Fall Time: | 5.7 ns |
Forward Transconductance - Min: | 66 S |
Product Type: | MOSFET |
Rise Time: | 5.7 ns |
other: | 6000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 18.8 ns |
Typical Turn-On Delay Time: | 10 ns |
Part # Aliases: | IQE030N06NM5SC SP005559064 |
IGQ100N120S7XKSA1
Brand:Infineon Technologies
IPTC039N15NM5ATMA1
Brand:Infineon Technologies
IPT022N10NF2SATMA1
Brand:Infineon Technologies
FF1800R23IE7PBPSA1
Brand:Infineon Technologies
2SA1941-O(Q)
Brand:Toshiba
PSMN028-100HSX
Brand:Nexperia
IPB95R130PFD7ATMA1
Brand:Infineon Technologies
SQJ186ELP-T1_GE3
Brand:Vishay Semiconductors
NTBG014N120M3P
Brand:onsemi
MJD44H11T4G
Brand:onsemi
Hong Kong: 852-26713361
Shen Zhen: 0755-21913499
Email:sales@sanxi-pro.com