2SA1941-O(Q)

Manufacturer No:2SA1941-O(Q)

Manufacturer:Toshiba

Type:BJTs - Bipolar Transistors

Description:Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Toshiba
Product Category:	Bipolar Transistors - BJT
RoHS:
Mounting Style:	Through Hole
Transistor Polarity:	PNP
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	140 V
Collector- Base Voltage VCBO:	140 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	800 mV
Maximum DC Collector Current:	10 A
Pd - Power Dissipation:	100 W
Gain Bandwidth Product fT:	30 MHz
Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C
Brand:	Toshiba
Continuous Collector Current:	10 A
DC Collector/Base Gain hfe Min:	35
DC Current Gain hFE Max:	83
Product Type:	BJTs - Bipolar Transistors
other:	4000
Subcategory:	Transistors
Technology:	Si
Unit Weight:	0.165788 oz