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    • MJD44H11T4G

      Manufacturer No:MJD44H11T4G

      Manufacturer:onsemi

      Type:BJTs - Bipolar Transistors

      Description:Bipolar Transistors - BJT 8A 80V 20W NPN

      RFQ

    Specifications

    Manufacturer:

    onsemi

    Product   Category:

    Bipolar   Transistors - BJT

    RoHS:

    Details

    Mounting   Style:

    SMD/SMT

    Package   / Case:

    TO-252-3

    Transistor   Polarity:

    NPN

    Configuration:

    Single

    Collector-   Emitter Voltage VCEO Max:

    80   V

    Collector-   Base Voltage VCBO:

    -

    Emitter-   Base Voltage VEBO:

    5   V

    Collector-Emitter   Saturation Voltage:

    1   V

    Maximum   DC Collector Current:

    8   A

    Pd   - Power Dissipation:

    20   W

    Gain   Bandwidth Product fT:

    85   MHz

    Minimum   Operating Temperature:

    -   55 C

    Maximum   Operating Temperature:

    +   150 C

    Series:

    MJD44H11

    Packaging:

    Reel

    Packaging:

    Cut   Tape

    Brand:

    onsemi

    Continuous   Collector Current:

    8   A

    DC   Collector/Base Gain hfe Min:

    60

    Height:

    2.38   mm

    Length:

    6.73   mm

    Product   Type:

    BJTs   - Bipolar Transistors

    Subcategory:

    Transistors

    Technology:

    Si

    Width:

    6.22   mm

    Unit   Weight:

    0.015873   oz

     


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