Manufacturer No:CGHV1F025S
Manufacturer:Wolfspeed
Type:RF JFET Transistors
Description:RF JFET Transistors GaN HEMT DC-15GHz 25 Watt
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Product Attribute | Attribute Value |
---|---|
Manufacturer: | Wolfspeed |
Product Category: | RF JFET Transistors |
Shipping Restrictions: |
This product may require additional documentation to export from the United States.
|
RoHS: | Details |
Transistor Type: | HEMT |
Technology: | GaN-on-SiC |
Operating Frequency: | 15 GHz |
Gain: | 11 dB |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | - 10 V to 2 V |
Id - Continuous Drain Current: | 2 A |
Output Power: | 25 W |
Maximum Drain Gate Voltage: | - |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | - |
Mounting Style: | SMD/SMT |
Package / Case: | DFN-12 |
Packaging: | Reel |
Packaging: | Cut Tape |
Application: | - |
Brand: | Wolfspeed |
Class: | - |
Configuration: | Single |
Development Kit: | CGHV1F025S-TB |
Fall Time: | - |
Forward Transconductance - Min: | - |
Gate-Source Cutoff Voltage: | - |
Height: | 0.9 mm |
Length: | 4 mm |
Moisture Sensitive: | Yes |
NF - Noise Figure: | - |
Operating Temperature Range: | - 40 C to + 150 C |
P1dB - Compression Point: | - |
Product: | GaN HEMT |
Product Type: | RF JFET Transistors |
Rds On - Drain-Source Resistance: | - |
Rise Time: | - |
other: | 250 |
Subcategory: | Transistors |
Type: | GaN SiC HEMT |
Typical Turn-Off Delay Time: | - |
Vgs th - Gate-Source Threshold Voltage: | - 3 V |
Width: | 3 mm |
Unit Weight: | 0.133060 oz |
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