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  • HOME > Products > Wireless & RF Semiconductors > Transistors RF
    • CGHV1F025S

      Manufacturer No:CGHV1F025S

      Manufacturer:Wolfspeed

      Type:RF JFET Transistors

      Description:RF JFET Transistors GaN HEMT DC-15GHz 25 Watt

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Wolfspeed
    Product Category: RF JFET Transistors
    Shipping Restrictions:
    RoHS:  Details
    Transistor Type: HEMT
    Technology: GaN-on-SiC
    Operating Frequency: 15 GHz
    Gain: 11 dB
    Transistor Polarity: N-Channel
    Vds - Drain-Source Breakdown Voltage: 100 V
    Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
    Id - Continuous Drain Current: 2 A
    Output Power: 25 W
    Maximum Drain Gate Voltage: -
    Minimum Operating Temperature: - 40 C
    Maximum Operating Temperature: + 150 C
    Pd - Power Dissipation: -
    Mounting Style: SMD/SMT
    Package / Case: DFN-12
    Packaging: Reel
    Packaging: Cut Tape
    Application: -
    Brand: Wolfspeed
    Class: -
    Configuration: Single
    Development Kit: CGHV1F025S-TB
    Fall Time: -
    Forward Transconductance - Min: -
    Gate-Source Cutoff Voltage: -
    Height: 0.9 mm
    Length: 4 mm
    Moisture Sensitive: Yes
    NF - Noise Figure: -
    Operating Temperature Range: - 40 C to + 150 C
    P1dB - Compression Point: -
    Product: GaN HEMT
    Product Type: RF JFET Transistors
    Rds On - Drain-Source Resistance: -
    Rise Time: -
    other: 250
    Subcategory: Transistors
    Type: GaN SiC HEMT
    Typical Turn-Off Delay Time: -
    Vgs th - Gate-Source Threshold Voltage: - 3 V
    Width: 3 mm
    Unit Weight: 0.133060 oz

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