Manufacturer No:BFR 182W H6327
Manufacturer:Infineon
Type:RF Bipolar Transistors
Description:RF Bipolar Transistors RF BIP TRANSISTOR
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Product Attribute | Attribute Value |
---|---|
Manufacturer: | Infineon |
Product Category: | RF Bipolar Transistors |
RoHS: | Details |
Series: | BFR182 |
Transistor Type: | Bipolar |
Technology: | Si |
Transistor Polarity: | NPN |
Operating Frequency: | 8 GHz |
DC Collector/Base Gain hfe Min: | 70 |
Collector- Emitter Voltage VCEO Max: | 12 V |
Emitter- Base Voltage VEBO: | 2 V |
Continuous Collector Current: | 35 mA |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-323 |
Qualification: | AEC-Q101 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | Reel |
Brand: | Infineon Technologies |
Pd - Power Dissipation: | 250 mW |
Product Type: | RF Bipolar Transistors |
other: | 3000 |
Subcategory: | Transistors |
Type: | RF Bipolar Small Signal |
Part # Aliases: | SP000750420 BFR182WH6327XT BFR182WH6327XTSA1 |
Unit Weight: | 0.002116 oz |
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