Manufacturer No:CGH60030D-GP4
Manufacturer:Wolfspeed
Type:RF JFET Transistors
Description:RF JFET Transistors GaN HEMT Die DC-6.0GHz 30 Watt
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Product Attribute | Attribute Value |
---|---|
Manufacturer: | Wolfspeed |
Product Category: | RF JFET Transistors |
RoHS: | Details |
Transistor Type: | HEMT |
Technology: | GaN |
Operating Frequency: | 4 GHz to 6 GHz |
Gain: | 15 dB |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 120 V |
Vgs - Gate-Source Breakdown Voltage: | - 10 V to 2 V |
Id - Continuous Drain Current: | 3 A |
Output Power: | 30 W |
Maximum Drain Gate Voltage: | - |
Pd - Power Dissipation: | - |
Mounting Style: | SMD/SMT |
Package / Case: | Die |
Packaging: | Waffle |
Application: | - |
Brand: | Wolfspeed |
Class: | - |
Configuration: | Dual |
Development Kit: | - |
Fall Time: | - |
Gate-Source Cutoff Voltage: | - |
Height: | 100 um |
Length: | 1.66 mm |
NF - Noise Figure: | - |
Number of Channels: | 2 Channel |
Operating Temperature Range: | - |
P1dB - Compression Point: | - |
Product: | GaN HEMT |
Product Type: | RF JFET Transistors |
Rds On - Drain-Source Resistance: | 500 mOhms |
Rise Time: | - |
other: | 10 |
Subcategory: | Transistors |
Typical Turn-Off Delay Time: | - |
Vgs th - Gate-Source Threshold Voltage: | - 3 V |
Width: | 920 um |
Unit Weight: | 0.258417 oz |
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