FMMT411FDBWQ-7

Manufacturer No:FMMT411FDBWQ-7

Manufacturer:Diodes Incorporated

Type:BJTs - Bipolar Transistors

Description:Bipolar Transistors - BJT Avalanche Transistor W-DFN2020-3/SWP T&R 3K

RFQ

Specifications

Product Attribute	Attribute Value
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	W-DFN2020-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	80 V
Collector- Base Voltage VCBO:	80 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	100 mV
Pd - Power Dissipation:	1.8 W
Gain Bandwidth Product fT:	110 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	FMMT411FDBWQ-7
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Continuous Collector Current:	5 A
DC Collector/Base Gain hfe Min:	100 at 10 mA 10 V
Product Type:	BJTs - Bipolar Transistors
other:	3000
Subcategory:	Transistors
Technology:	Si