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  • HOME > Products > Discrete Semiconductors > Discrete Semiconductor Modules
    • MSCSM120AM03CT6LIAG

      Manufacturer No:MSCSM120AM03CT6LIAG

      Manufacturer:Microchip

      Type:Discrete Semiconductor Modules

      Description:Discrete Semiconductor Modules SiC MOSFET Power Module

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Microchip
    Product Category: Discrete Semiconductor Modules
    RoHS:  Details
    Product: Power MOSFET Modules
    Type: Phase Leg
    Technology: SiC
    Vf - Forward Voltage: 1.5 V
    Vr - Reverse Voltage: 1.2 kV
    Vgs - Gate-Source Voltage: - 10 V + 25 V
    Mounting Style: SMD/SMT
    Package / Case: SP6
    Minimum Operating Temperature: - 40 C
    Maximum Operating Temperature: + 125 C
    Brand: Microchip Technology
    Configuration: Dual
    Fall Time: 67 ns
    Id - Continuous Drain Current: 805 A
    Pd - Power Dissipation: 3.215 kW
    Product Type: Discrete Semiconductor Modules
    Rds On - Drain-Source Resistance: 3.1 mOhms
    Rise Time: 55 ns
    other: 1
    Subcategory: Discrete Semiconductor Modules
    Transistor Polarity: N-Channel
    Typical Turn-Off Delay Time: 166 ns
    Typical Turn-On Delay Time: 56 ns
    Vds - Drain-Source Breakdown Voltage: 1.2 kV
    Vgs th - Gate-Source Threshold Voltage: 1.8 V

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