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  • HOME > Products > Discrete Semiconductors > Discrete Semiconductor Modules
    • GCMX040B120S1-E1

      Manufacturer No:GCMX040B120S1-E1

      Manufacturer:SemiQ

      Type:Discrete Semiconductor Modules

      Description:Discrete Semiconductor Modules

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: SemiQ
    Product Category: Discrete Semiconductor Modules
    RoHS:  Details
    Product: Power MOSFET Modules
    Technology: SiC
    Vf - Forward Voltage: 3.8 V
    Vgs - Gate-Source Voltage: 25 V
    Mounting Style: Screw Mounts
    Package / Case: SOT-227-4
    Minimum Operating Temperature: - 55 C
    Maximum Operating Temperature: + 175 C
    Packaging: Tube
    Brand: SemiQ
    Fall Time: 12 ns
    Id - Continuous Drain Current: 57 A
    Pd - Power Dissipation: 242 W
    Product Type: Discrete Semiconductor Modules
    Rds On - Drain-Source Resistance: 52 mOhms
    Rise Time: 5 ns
    other: 10
    Subcategory: Discrete Semiconductor Modules
    Transistor Polarity: N-Channel
    Typical Turn-Off Delay Time: 21 ns
    Typical Turn-On Delay Time: 15 ns
    Vds - Drain-Source Breakdown Voltage: 1.2 kV
    Vgs th - Gate-Source Threshold Voltage: 4 V

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