• One-stop ElectronicL Components Service Platform
  • 中文介绍
  • Contact Us  ▼
  • Brand Category

  • HOME > Products > Discrete Semiconductors > Transistors
    • PMDXB290UNEZ

      Manufacturer No:PMDXB290UNEZ

      Manufacturer:Nexperia

      Type:MOSFET

      Description:MOSFET MOS DISCRETES

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: Nexperia
    Product Category: MOSFET
    RoHS:  Details
    Technology: Si
    Mounting Style: SMD/SMT
    Package / Case: DFN1010B-6
    Transistor Polarity: N-Channel
    Number of Channels: 2 Channel
    Vds - Drain-Source Breakdown Voltage: 20 V
    Id - Continuous Drain Current: 930 mA
    Rds On - Drain-Source Resistance: 320 mOhms
    Vgs - Gate-Source Voltage: - 8 V + 8 V
    Vgs th - Gate-Source Threshold Voltage: 1 V
    Qg - Gate Charge: 600 pC
    Minimum Operating Temperature: - 55 C
    Maximum Operating Temperature: + 150 C
    Pd - Power Dissipation: 370 mW
    Channel Mode: Enhancement
    Packaging: Reel
    Packaging: Cut Tape
    Packaging: Reel
    Brand: Nexperia
    Configuration: Dual
    Fall Time: 3 ns
    Forward Transconductance - Min: 1.9 S
    Product Type: MOSFET
    Rise Time: 3 ns
    other: 5000
    Subcategory: MOSFETs
    Typical Turn-Off Delay Time: 5 ns
    Typical Turn-On Delay Time: 1 ns
    Part # Aliases: 934665536147

    HOT

  • SQ4401CEY-T1_GE3
    Brand:Vishay Semiconductors

  • FS33MR12W1M1HB11BPSA1
    Brand:Infineon Technologies

  • SISHA06DN-T1-GE3
    Brand:Vishay Semiconductors

  • PSMN8R0-40HLX
    Brand:Nexperia

  • IKQB160N75CP2AKSA1
    Brand:Infineon Technologies

  • PSMNR98-25YLEX
    Brand:Nexperia

  • SQJQ184E-T1_GE3
    Brand:Vishay Semiconductors

  • IPT015N10NF2SATMA1
    Brand:Infineon Technologies

  • IPB95R130PFD7ATMA1
    Brand:Infineon Technologies

  • SQJ186ELP-T1_GE3
    Brand:Vishay Semiconductors