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  • HOME > Products > Wireless & RF Semiconductors > Transistors RF
    • MRFE6VS25LR5

      Manufacturer No:MRFE6VS25LR5

      Manufacturer:NXP

      Type:RF MOSFET Transistors

      Description:RF MOSFET Transistors VHV6E 25W50V NI360L

      RFQ

    Specifications

    Product Attribute Attribute Value
    Manufacturer: NXP
    Product Category: RF MOSFET Transistors
    RoHS:  Details
    Transistor Polarity: N-Channel
    Technology: Si
    Id - Continuous Drain Current: 210 mA
    Vds - Drain-Source Breakdown Voltage: 140 V
    Rds On - Drain-Source Resistance: -
    Operating Frequency: 1.8 MHz to 2 GHz
    Gain: 25.9 dB
    Output Power: 25 W
    Minimum Operating Temperature: - 40 C
    Maximum Operating Temperature: + 150 C
    Mounting Style: SMD/SMT
    Package / Case: NI-360-2
    Packaging: Reel
    Packaging: Cut Tape
    Packaging: Reel
    Brand: NXP Semiconductors
    Channel Mode: Enhancement
    Configuration: Single
    Product Type: RF MOSFET Transistors
    Series: MRFE6VS25L
    other: 50
    Subcategory: MOSFETs
    Transistor Type: LDMOS FET
    Type: RF Power MOSFET
    Vgs - Gate-Source Voltage: 10 V
    Vgs th - Gate-Source Threshold Voltage: 2 V
    Part # Aliases: 935320096178
    Unit Weight: 0.103628 oz

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