Manufacturer No:MRFE6S9060NR1
Manufacturer:NXP
Type:RF MOSFET Transistors
Description:RF MOSFET Transistors HV6E 60W TO270-2N FET
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Product Attribute | Attribute Value |
---|---|
Manufacturer: | NXP |
Product Category: | RF MOSFET Transistors |
RoHS: | Details |
Transistor Polarity: | N-Channel |
Technology: | Si |
Id - Continuous Drain Current: | 1.5 A |
Vds - Drain-Source Breakdown Voltage: | 66 V |
Rds On - Drain-Source Resistance: | - |
Operating Frequency: | 1 GHz |
Gain: | 21.1 dB |
Output Power: | 14 W |
Minimum Operating Temperature: | - 65 C |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | TO-270 |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Height: | 2.08 mm |
Length: | 9.7 mm |
Moisture Sensitive: | Yes |
Product Type: | RF MOSFET Transistors |
Series: | MRFE6S9060N |
other: | 500 |
Subcategory: | MOSFETs |
Type: | RF Power MOSFET |
Vgs - Gate-Source Voltage: | - 500 mV 12 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Width: | 6.15 mm |
Part # Aliases: | 935309637528 |
Unit Weight: | 0.018679 oz |
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Email:sales@sanxi-pro.com